2SC1894资料

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1894

DESCRIPTION

・With TO-3 package

・High breakdown voltage

・Low collector saturation voltage

APPLICATIONS

・For color TV horizontal output applications

PINNING(see Fig.2)

PIN DESCRIPTION 1

Base

2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃)

SYMBOL PARAMETER VCBO VCEO VEBO IC PC

Collector-base voltage

固电体导半CIMES EGNAHCINOpen emitter

Collector-emitter voltage Emitter-base voltage

Open base Open collector TC=25℃

Collector current Collector power dissipation

CONDITIONS VALUE UNIT

1500 600 5 5 50 150 V V V A W ℃

ROTCUDON

Tj Junction temperature Tstg Storage temperature

-55~150 ℃

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltageV(BR)EBO VCEsat VBEsat ICBO IEBO hFE

Emitter-base breakdown voltage Collector-emitter saturation voltageBase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain

2SC1894

CONDITIONS MIN TYP. MAXUNIT

600 V IC=0.1A ;IB=0

IE=1mA ;IC=0 5 V

IC=4A; IB=0.8A 5.0 V

IC=4A; IB=0.8A 1.5 V VCB=750V; IE=0 50 μA

VEB=5V; IC=0 50 μA IC=1A ; VCE=5V

10 40 fT Transition frequency COB

固电Collector output capacitance

体导半IC=0.1A ; VCE=10V 3 MHz

CIMES EGNAHCINIE=0; VCB=10V;f=1MHz 155 pF

ROTCUDON 2

元器件交易网www.cecb2b.com

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SC1894

固电体导半CIMES EGNAHCINROTCUDONFig.2 outline dimensions (unindicated tolerance:±0.1mm)

3