专利名称：Ferroelectric film, method of manufacturing
ferroelectric film, ferroelectric capacitor,and ferroelectric memory
发明人：Takeshi Kijima申请号：US10960001申请日：20041008
公开号：US20050117439A1公开日：20050602
专利附图：
摘要：A method of manufacturing a ferroelectric film including: forming a ferroelectricinitial nucleus layer by using a solution of a first ferroelectric material and
electrodepositing the first ferroelectric material on an electrode by hydrothermalelectrodeposition; electrically charging particles of a second ferroelectric material;forming a ferroelectric material film by electrodepositing the electrically-chargedparticles of the second ferroelectric material on the ferroelectric initial nucleus layer byelectrophoretic deposition; and subjecting the ferroelectric material film to a heattreatment.
申请人：Takeshi Kijima
地址：Matsumoto-shi JP
国籍：JP
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