Method of forming a semiconductor structure

专利名称：Method of forming a semiconductor

structure

发明人：Liang-Gi Yao,Chia-Cheng Chen,Ta-Ming

Kuan,Jeff J. Xu,Clement Hsingjen Wann

申请号：US14713211申请日：20150515公开号：US09922827B2公开日：20180320

专利附图：

摘要：A method of cleaning a semiconductor structure includes rotating asemiconductor structure. The method of cleaning further includes cleaning the

semiconductor structure with a hydrogen fluoride (HF)-containing gas. A method offorming a semiconductor device includes forming a recess in a source/drain (S/D) regionof a transistor. The method of forming further includes cleaning the recess with a HF-containing gas, the HF-containing gas having an oxide removing rate of about 2

nanometer/minute (nm/min) or less. The method of forming further includes epitaxiallyforming a strain structure in the recess after the cleaning the recess, the strain structureproviding a strain to a channel region of the transistor.

申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

地址：Hsinchu TW

国籍：TW

代理机构：Hauptman Ham, LLP

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