High-power pulsed magnetically enhanced plasma pro

专利名称：High-power pulsed magnetically enhanced

plasma processing

发明人：Roman Chistyakov申请号：US10065551申请日：20021029

公开号：US20040082187A1公开日：20040429

专利附图：

摘要：Magnetically enhanced plasma processing methods and apparatus aredescribed. A magnetically enhanced plasma processing apparatus according to thepresent invention includes an anode and a cathode that is positioned adjacent to the

anode. An ionization source generates a weakly-ionized plasma proximate to thecathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionizedplasma proximate to the cathode. A power supply produces an electric field in a gapbetween the anode and the cathode. The electric field generates excited atoms in theweakly-ionized plasma and generates secondary electrons from the cathode. Thesecondary electrons ionize the excited atoms, thereby creating a strongly-ionizedplasma. A voltage supply applies a bias voltage to a substrate that is positionedproximate to the cathode that causes ions in the plurality of ions to impact a surface ofthe substrate in a manner that causes etching of the surface of the substrate

申请人：CHISTYAKOV ROMAN

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