ESD8V0R1B-02LS

IEC61000-4-2 (ESD): ±18 kV (air) ±15 kV (contact) IEC61000-4-4 (EFT): 40 A (5 / 50 ns)• Extremely small form factor down to 0.62 x 0.32 x 0.31 mm³ (0201)• Max. working voltage: −8 / +14 V• Very low reverse current < 1 nA typ.

• Very low series inductance down to 0.2 nH typ.• Low capacitance of 4 pF typ.• Pb-free (RoHS compliant) package• Qualified according AEC Q101Applications

• USB 2.0, 10/100 Ethernet, Firewire, DVI• Mobile communication

• Consumer products (STB, MP3, DVD, DSC...)• LCD displays, camera

• Notebooks and destop computers, peripherals

ESD8V0R1B-02LSESD8V0R1B-02LRH

12Type

ESD8V0R1B-02LRH ESD8V0R1B-02LSPackageTSLP-2-17 TSSLP-2-1Configuration

1 line, bi-directional 1 line, bi-directionalMarkingE E

12009-12-18

ESD8V0R1B...Maximum Ratings at TA = 25°C, unless otherwise specifiedParameterESD discharge1) air contact

Peak pulse current (tp = 8 / 20 µs)2)Operating temperature rangeStorage temperature

IppTopTstgSymbolVESD

Value 18151-55...150-65...150

A°CUnitkV

Electrical Characteristics at TA = 25°C, unless otherwise specifiedParameterCharacteristics

Reverse working voltage, from pin 2 to 1Breakdown voltage I(BR) = 1 mA, from pin 2 to 1 I(BR) = 1 mA, from pin 1 to 2Reverse current VR = 3.3 VClamping voltage

IPP = 1 A, tP = 8/20 µs, from pin 2 to 12) IPP = 1 A, tP = 8/20 µs, from pin1 to 22) Line capacitance VR = 0 V, f = 1 MHzSeries inductance ESD8V0R1B-02LS ESD8V0R1B-02LRH

1V2I

Symbol

min.

VRWMV(BR)

-8 14.58.5

IRVCL

- --CTLS

- --

Valuestyp.- 1711<1 23174 0.20.4

max.14 201450 28227 --

Unit

V

nAV

pFnH

ESD according to IEC61000-4-2

pp according to IEC61000-4-5

22009-12-18

Non-repetitive peak pulse power Ppk = ƒ (tp)

10 3 W10 2 D= 0kD= .005pPD= .01D= .02D= .05D= .1D= .2D= .510 1 10 0 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0

tpReverse current IR = ƒ(VR)TA = Parameter

10 1 nATA = 85°C10 0 RITA = 25°C10 -1 10 -2 0246810V14VRESD8V0R1B...Power derating curve Ppk = ƒ (TA)

110 %90 ppI 80 ro kpP70 60 50 40 30 20 10 0 0255075100°C150TADiode capacitance CT = ƒ (VR)f = 1MHz

7 pF5 TC4 3 2 1 0 024681012V15VR32009-12-18

ESD8V0R1B...Application example ESD8V0R1B...1 line, bi-directional

roProtected data line with signal levelstcESDe-8V up to +14V (bi-directional)nI/OsensitivenoCdevice2The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. 1Pin 1 should be connected directly to a ground plane on the board.42009-12-18

TSLP-2-17 (mm)ESD8V0R1B...Standard PackingReel ø180 mm = 15.000 Pieces/ReelReel ø330 mm = 50.000 Pieces/Reel (optional)41.160.5Cathodemarking0.76Foot PrintFor board assembly information please refer to Infineon website \"Packages\"0.350.450.30.92510.2750.2750.3750.6Copper0.35Solder maskStencil aperturesMarking Layout (Example)BAR90-02LRHType codeCathode markingLaser markingPackage OutlineTop view0.39+0.01-0.030.05 MAX.0.65±0.058Bottom view0.6±0.052211Cathodemarking1) Dimension applies to plated terminal0.25±0.0351)0.5±0.0351)1±0.0552009-12-18

TSSLP-2-1 (mm)ESD8V0R1B...62009-12-18

ESD8V0R1B...Edition 2009-11-16

Published by

Infineon Technologies AG81726 Munich, Germany

 2009 Infineon Technologies AGAll Rights Reserved.

Warnings

Due to technical requirements, components may contain dangerous substances.For information on the types in question, please contact the nearest InfineonTechnologies Office.

Infineon Technologies components may be used in life-support devices or systemsonly with the express written approval of Infineon Technologies, if a failure of suchcomponents can reasonably be expected to cause the failure of that life-supportdevice or system or to affect the safety or effectiveness of that device or system.Life support devices or systems are intended to be implanted in the human body orto support and/or maintain and sustain and/or protect human life. If they fail, it isreasonable to assume that the health of the user or other persons may beendangered.

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Information

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2009-12-18