IRLL014N
HEXFET® Power MOSFET
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Surface Mount
Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt RatingFast Switching
Fully Avalanche Rated
DVDSS = 55VRDS(on) = 0.14ΩGSDescription
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave soldering techniques.Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but hasthe added advantage of improved thermal performancedue to an enlarged tab for heatsinking. Power dissipationof 1.0W is possible in a typical surface mount application.
ID = 2.0ASOT-223Absolute Maximum Ratings
Parameter
ID @ TA = 25°CID @ TA = 25°CID @ TA = 70°CIDM
PD @TA = 25°CPD @TA = 25°CVGSEASIAREARdv/dtTJ, TSTG
Continuous Drain Current, VGS @ 10V**Continuous Drain Current, VGS @ 10V*Continuous Drain Current, VGS @ 10V*Pulsed Drain Current
Power Dissipation (PCB Mount)**Power Dissipation (PCB Mount)*Linear Derating Factor (PCB Mount)*Gate-to-Source Voltage
Single Pulse Avalanche EnergyAvalanche Current
Repetitive Avalanche Energy*Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
2.82.01.6162.11.08.3 ± 1632 2.0 0.17.2
-55 to + 150
Units
A
WW
mW/°C
VmJAmJV/ns°C
Thermal Resistance
Parameter
RθJARθJA
Junction-to-Amb. (PCB Mount, steady state)*Junction-to-Amb. (PCB Mount, steady state)**
Typ.
9050
Max.
12060
Units
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRLL014N
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