专利名称：Spin tunnel transistor发明人：Rie Sato,Koichi Mizushima申请号：US11446245申请日：20060605
公开号：US20060220162A1公开日：20061005
专利附图：
摘要：Some spin tunnel transistors with a larger current transmittance and a higherMR ratio are described. One of the spin tunnel transistor comprises a collector; anemitter; abase formed between the collector and the emitter, including a first
ferromagnetic metal layer variable in its magnetization under an external magnetic field;
a barrier layer formed between the first ferromagnetic metal layer and one of thecollector and the emitter, the other of the collector and the emitter including asemiconductor crystal layer; and a transition metal silicide crystal layer between thesemiconductor crystal layer and the base. The transition metal silicide crystal layer maybe replaced with a palladium layer, a transition metal nitride layer, or a transition metalcarbide layer.
申请人：Rie Sato,Koichi Mizushima
地址：Kanagawa-ken JP,Kanagawa-ken JP
国籍：JP,JP
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