专利名称：Method of manufacturing a MOSFET发明人：Tsutsu, Hiroshi申请号：EP99107808.0申请日：19950523公开号：EP0935292A2公开日：19990811
专利附图：
摘要：A thin film semiconductor device includes: a substrate having an insulatingsurface; a semiconductor layer containing silicon and germanium formed on the
substrate; a gate insulating film formed on the semiconductor layer; and a gate electrodeformed on the gate insulating film, wherein the gate insulating film includes a thermaloxide film formed by thermally oxidizing a surface of the semiconductor layer.
申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
地址：1006, Oaza Kadoma Kadoma-shi, Osaka-fu, 571 JP
国籍：JP
代理机构：Kügele, Bernhard
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