专利名称：SELF ALIGNED STRUCTURES AND DESIGN
STRUCTURE THEREOF
发明人：William F. CLARK, JR.,John J. PEKARIK,Yun
SHI,Yanli ZHANG
申请号：US13343287申请日：20120104
公开号：US20130168822A1公开日：20130704
专利附图：
摘要：Vertical bipolar junction structures, methods of manufacture and designstructures. The method includes forming one or more sacrificial structures for a bipolar
junction transistor (BJT) in a first region of a chip. The method includes forming a maskover the one or more sacrificial structures. The method further includes etching anopening in the mask, aligned with the one or more sacrificial structures. The methodincludes forming a trench through the opening and extending into diffusion regionsbelow the one or more sacrificial structures. The method includes forming a base regionof the BJT by depositing an epitaxial material in the trench, in contact with the diffusionregions. The method includes forming an emitter contact by depositing a second epitaxialmaterial on the base region within the trench. The epitaxial material for the emitterregion is of an opposite dopant type than the epitaxial material of the base region.
申请人：William F. CLARK, JR.,John J. PEKARIK,Yun SHI,Yanli ZHANG
地址：Essex Junction VT US,Underhill VT US,South Burlington VT US,San Jose CA US
国籍：US,US,US,US
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