专利名称：Monolithic step attenuator having internal
frequency compensation
发明人：Eric R. Ehlers申请号：US08/631522申请日：19960412公开号：US05666089A公开日：19970909
摘要：In the present invention a monolithic step attenuator has internal frequencycompensation provided by a field effect transistor, or FET, fabricated to have a welldefined drain-to-source capacitance. The drain- to-source capacitance of the FET cancelsthe effect of parasitic impedances, providing a constant frequency response for themonolithic step attenuator within a defined frequency range. In a first embodiment of thepresent invention, internal frequency compensation is provided by a FET connected in ashunt arm of a Tee resistor network forming the monolithic step attenuator. In a secondembodiment of the present invention, internal frequency compensation is provided by apair of FETs, each FET connected in one of two shunt arms of a Pi resistor networkforming the monolithic step attenuator. In a third embodiment of the present invention, amulticell step attenuator is formed by connecting multiple monolithic step attenuatorshaving internal frequency compensation in series.
申请人：HEWLETT-PACKARD COMPANY
代理人：John L. Imperato
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