专利名称：Method of producing boron-containing
and/or phosphorous-containing silicateglass layers for highly integrated circuits
发明人：TREICHEL, HELMUTH, DIPL.-ING.,FUCHS,
DIETER, DIPL.-ING.,HIEBER, KONRAD,DR.,KRUCK, THOMAS, PROF. DR.,SPINDLER,OSWALD, DR.,NEUREITHER, BERNHARD,DIPL.-ING.
申请号：EP89106621.9申请日：19890413公开号：EP0339385A2公开日：19891102
专利附图：
摘要：In a process for producing boron-containing and/or phosphorous- containingsilicate glass layers, such as borosilicate glass, phosphorosilicate glass,
borophosphorosilicate glass or boroarsenosilicate glass, the starting materials for thedecomposition and deposition from the gas phase are organic silicon-oxygen-boroncompounds or silicon-oxygen-phosphorus compounds which already contain all theelements in the predetermined ratio. The decomposition of the organic startingcompounds can be carried out thermally or by excitation in an electromagneticalternating field. The process is used in producing insulating layers between conductortracks, passivation layers and auxiliary layers in doping, and in particular in producingtrench-type capacitor storage cells (DRAMs) for the substrate doping in the cell field.The process makes it possible to produce stable silicate glass layers with a specifieddoping even at high integration density and can be carried out at low depositiontemperatures. The starting materials used are nontoxic and can readily be handled.
申请人：SIEMENS AKTIENGESELLSCHAFT
地址：Wittelsbacherplatz 2 80333 München DE
国籍：DE
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