专利名称:Method of producing semiconductor wafer发明人:Kurita, Kazunari申请号:EP09159575.1申请日:20090506公开号:EP2116323A1公开日:20091111
专利附图:
摘要:A semiconductor wafer is produced by irradiating a laser beam to either face ofa semiconductor wafer so as to fit a focusing position into a given depth position of thesemiconductor wafer to generate a multiphoton absorption process only in a specificportion of the semiconductor wafer at the given depth position to thereby form a
gettering sink.
申请人:SUMCO CORPORATION
地址:2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 JP
国籍:JP
代理机构:Cabinet Plasseraud
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