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Method of producing semiconductor wafer

2021-12-03 来源:华拓网
专利内容由知识产权出版社提供

专利名称:Method of producing semiconductor wafer发明人:Kurita, Kazunari申请号:EP09159575.1申请日:20090506公开号:EP2116323A1公开日:20091111

专利附图:

摘要:A semiconductor wafer is produced by irradiating a laser beam to either face ofa semiconductor wafer so as to fit a focusing position into a given depth position of thesemiconductor wafer to generate a multiphoton absorption process only in a specificportion of the semiconductor wafer at the given depth position to thereby form a

gettering sink.

申请人:SUMCO CORPORATION

地址:2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 JP

国籍:JP

代理机构:Cabinet Plasseraud

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