Si5476DU
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)a
1212
rDS(on) (W)
0.034 at VGS = 10 V0.041 at VGS = 4.5 V
Qg (Typ)
105nC10.5 nC
PowerPAKr ChipFETr Single
12DDDDDDGSSDTrenchFETr Power MOSFET
DNew Thermally Enhanced PowerPAKr ChipFETr Package–Small Footprint Area–Low On-Resistance–Thin 0.8-mm Profile
RoHS
COMPLIANT
APPLICATIONS34DLoad Switch for Portable ApplicationsDDC–DC Switch for low power Synchronous RectificationDIntermediate Switch Driver for DDC/DC ApplicationsMarking CodeAAXXXLot Traceabilityand Date Code8765GPart # CodeBottom ViewOrdering Information: Si5476DU–T1–E3 (Lead (Pb)–free)
SN-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source VoltageGate-Source Voltage
TC = 25 _C
ContinuousDrainCurrent (TJ = 150 Continuous Drain Current=150_C)
TC = 70 _CTA = 25 _CTA = 70 _C
Pulsed Drain Current
ContinuousSourceDrainDiodeCurrentContinuous Source-Drain Diode CurrentAvalanche Current
Single Pulse Avalanche Energy
TC = 25 _CTA = 25 _CL=01mHL = 0.1 mHTC = 25 _C
MaximumPowerDissipationMaximum Power Dissipation
TC = 70 _CTA = 25 _CTA = 70 _C
Operating Junction and Storage Temperature RangeSoldering Recommendations (Peak Temperature)d, eTJ, TstgPDIDMISIASEASID
Symbol
VDSVGS
Limit
60\" 2012a12a7b, c5.6b, c2512a2.6b, c1511.231203.1b, c2b, c– 55 to 150260
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, fMaximum Junction-to-Case (Drain)
t p 5 secSteady State
Symbol
RthJARthJC
Typical
343
Maximum
404
Unit
_C/W
Notes:
a.Package limited.
b.Surface Mounted on 1” x 1” FR4 Board.c.t = 5 sec.
d.See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensureadequate bottom side solder interconnection.
e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.f.Maximum under steady state conditions is 90 _C/W.Document Number: 73663S–60219—Rev. A, 20-Feb-06
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Si5476DU
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate-Source Threshold VoltageGate-Source Leakage
ZeroGateVoltageDrainCurrentZero Gate Voltage Drain CurrentOn-State Drain Currenta
DrainSourceOnStateResistanceaDrain-Source On-State ResistanceForward TransconductanceaVDS DVDS/TJDVGS(th)/TJVGS(th)IGSSIDSSID(on)rDS(on)DS()gfs
VGS = 0 V, ID = 1 mA
IID = 250 =250mA
VDS = VGS, ID = 250 mAVDS = 0 V, VGS = \" 20 VVDS = 60 V, VGS = 0 VVDS = 60 V, VGS = 0 V, TJ = 55 _C
VDS w 5 V, VGS = 10 VVGS = 10 V, ID = 4.6 AVGS = 4.5 V, ID = 4.2 AVDS = 15 V, ID = 4.6 A
25
0.0280.03320
0.0340.041
160
55– 6.33\"100110VmV/_CVnsmAAWS
SymbolTest ConditionMinTypMaxUnit
Dynamicb
Input CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTotalGateChargeTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise Time
Turn-Off Delay TimeFall TimeTurn-On Delay TimeRise Time
Turn-Off Delay TimeFall Time
CissCossCrssQgQgsQgdRgtd(on)trtd(off)tftd(on)trtd(off)tf
VDD = 30 V, RL = 5.4 W
ID^ 5.6 A, VGEN = 10 V, Rg = 1 WVDD = 30 V, RL = 5.4 W
ID^ 5.6 A, VGEN = 4.5 V, Rg = 1 W
f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 4.6 AVDS = 30 V, VGS = 4.5 V, ID= 4.6 AVDS = 30 V, VGS = 0 V, f = 1 MHz
110090552110.53.54.23.320150206010152510
30225309015254015
nsW
3216
nCpFp
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode CurrentPulse Diode Forward CurrentBody Diode Voltage
Body Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise Time
Notes
a.Pulse test; pulse width v300 ms, duty cycle v2 %.b.Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum ratingconditions for extended periods may affect device reliability.
ISISMVSDtrrQrrtatb
=55Adi/dt=100A/msTJ = 25 =25_CIF = 5.5 A, di/dt = 100 A/s, T
IS = 5.5 A, VGS = 0 V
0.852525196
TC = 25 _C
12251.25050
AVnsnCns
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Document Number: 73663
S–60219—Rev. A, 20-Feb-06
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Si5476DU
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)Output Characteristics25VGS = 10 thru 4 VID– Drain Current (A)5Vishay Siliconix
Transfer CharacteristicsID– Drain Current (A)204TC = – 55 _C153TC = 125 _C1025VGS = 3 V1TC = 25 _C00.0
0.20.40.60.81.01.21.41.61.82.0
00.0
0.51.01.52.02.53.03.5
VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage0.040
rDS(on) – On-Resistance (mW)1500
Capacitance
1200
0.036
VGS = 4.5 VC – Capacitance (pF)Ciss900
0.032
VGS = 10 V600
0.028
300
Coss0.024
0
5
10
15
20
25
00
Crss10
20
30
40
50
60
ID – Drain Current (A)VDS – Drain-to-Source Voltage (V)
10
VGS– Gate-to-Source Voltage (V)ID = 4.6 A8
Gate Charge
2.01.8
rDS(on) – On-Resistance(Normalized)1.61.41.21.00.8
On-Resistance vs. Junction Temperature
VGS = 10 VID = 4.6 A6
VDS = 30 VVDS = 48 V4
2
00
5
10
15
20
25
Qg – Total Gate Charge (nC)
Document Number: 73663S–60219—Rev. A, 20-Feb-06
0.6–50
–250255075100125150
TJ – Junction Temperature (_C)
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Si5476DU
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)Source-Drain Diode Forward Voltage30rDS(on) – Drain-to-Source On-Resistance (W)0.08ID = 4.6 AOn-Resistance vs. Gate-to-Source Voltage0.07TJ = 150 _CIS– Source Current (A)100.06TA = 125 _C0.050.04TJ = 25 _C0.03TA = 25 _C0.02024681010.00.20.40.60.81.01.2VSD – Source-to-Drain Voltage (V)VGS – Gate-to-Source Voltage (V)Threshold Voltage2.62.42.2VGS(th) (V)2.01.81.61.4101.21.0–5000.001ID = 250 mAPower (W)4050Single Pulse Power, Junction-to-Ambient3020–2502550751001251500.010.11Time (sec)101001000TJ – Temperature (_C)100Safe Operating Area, Junction-to-AmbientBVDSS Limited*Limited by rDS(on)10ID– Drain Current (A)100 ms1 ms110 ms100 ms0.1TA = 25 _CSingle Pulse1 s10 sdc10
100
0.010.1
1
VDS – Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
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Document Number: 73663S–60219—Rev. A, 20-Feb-06
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Si5476DU
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
24
353025201510500
25
50
75
100
125
150
25
50
75
100
125
150
Vishay Siliconix
Power De-Rating20
Power Dissipation (W)ID – Drain Current (A)16
Package Limited12
8
4
0
TC – Case Temperature (_C)TC – Case Temperature (_C)
*The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit forcases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73663S–60219—Rev. A, 20-Feb-06
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Si5476DU
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient1
Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.1
0.05Notes:PDMt10.02t21. Duty Cycle, D =2. Per Unit Base = RthJA = 75 _C/W3. TJM – TA = PDMZthJA(t)t1t20.01
10–410–3Single Pulse10–210–11Square Wave Pulse Duration (sec)104. Surface Mounted10010001
Duty Cycle = 0.5Normalized Effective TransientThermal ImpedanceNormalized Thermal Transient Impedance, Junction-to-Case0.20.10.050.02Single Pulse0.110–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–11
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology andPackage Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, seehttp://www.vishay.com/ppg?73663.www.vishay.com
Document Number: 73663S–60219—Rev. A, 20-Feb-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, byestoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay'sterms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any expressor implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitnessfor a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000Revision: 08-Apr-05
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