Capacitor and method of forming a capacitor

专利名称：Capacitor and method of forming a

capacitor

发明人：Todd E. Smith申请号：US09198826申请日：19981124公开号：US06300187B2公开日：20011009

专利附图：

摘要：The invention comprises capacitors and methods of forming capacitors. In oneimplementation, a method of forming a capacitor includes forming a first capacitorelectrode. An SiNcomprising capacitor dielectric layer is formed over the first capacitor

electrode. The SiNcomprising layer is oxidized in the presence of a chlorine containingatmosphere under conditions which form a silicon oxynitride layer comprising chlorineatop the SiNlayer. In one aspect, the oxidizing sequentially comprises a dry oxidation inthe presence of an oxygen containing gas in the substantial absence of chlorine, a dryoxidation in the presence of a gas comprising oxygen and chlorine, and a wet oxidationcomprising chlorine. A second capacitor electrode is formed over the chlorine containingsilicon oxynitride layer. In one implementation, a method of forming a capacitorcomprises forming a first capacitor electrode. A capacitor dielectric layer comprising asilicon oxynitride region is formed over the first capacitor electrode. The silicon oxynitrideregion is exposed to a chlorine containing atmosphere under conditions effective toincorporate chlorine within the silicon oxynitride region. A second capacitor electrode isformed over the chlorine containing silicon oxynitride layer. In one implementation, acapacitor comprises a first capacitor electrode, a second capacitor electrode, and acapacitor dielectric material received intermediate the first and second capacitorelectrodes. At least a portion of the capacitor dielectric material comprises chlorineatoms present at a concentration of at least about 5×10atoms/cm.

申请人：MICRON TECHNOLOGY, INC.

代理机构：Wells, St. John, Roberts, Gregory & Matkin

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